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Generation of continuous wave terahertz frequency radiation from MOCVD grown Fe-doped InGaAs and InGaAsP

Citation

Freeman, Joshua R. and Mohandas, Reshma A. and Rosamond, Mark C. and Hatem, Osama and Chowdhury, Siddhant and Ponnampalam, Lalitha and Fice, Martyn and Seeds, Alwyn J. and Cannard, Paul J. and Robertson, Michael J. and Moodie, David G. and Cunningham, John and Linfield, Edmund and Davies, A. Giles and Dean, Paul (2016) Generation of continuous wave terahertz frequency radiation from MOCVD grown Fe-doped InGaAs and InGaAsP. University of Leeds. [Dataset] https://doi.org/10.5518/22

Dataset description

This dataset contains experimental data presented in the paper titled 'Generation of continuous wave terahertz frequency radiation from MOCVD grown Fe-doped InGaAs and InGaAsP'. The IV characteristics, THz signal amplitudes, bias and optical power dependence of the different InGaAs and InGaAsP wafers are given.

Subjects: F000 - Physical sciences > F300 - Physics > F320 - Chemical physics > F321 - Solid-state physics
H000 - Engineering > H600 - Electronic & electrical engineering
Divisions: Faculty of Engineering and Physical Sciences > School of Electronic and Electrical Engineering > Institute of Microwaves and Photonics
Related resources:
LocationType
https://doi.org/10.1109/IRMMW-THz.2015.7327846Publication
https://eprints.whiterose.ac.uk/90999/Publication
License: Creative Commons Attribution 4.0 International (CC BY 4.0)
Date deposited: 13 Jan 2016 16:18
URI: https://archive.researchdata.leeds.ac.uk/id/eprint/24

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