This dataset contains experimental data presented in the paper titled 'Generation of continuous wave terahertz frequency radiation from MOCVD grown Fe-doped InGaAs and InGaAsP '

Fig_2.csv contains (Fe doping, dark resistvity, photoresistance) data in the Fig.2 of the paper for the InGaAs and InGaAsP wafers

Fig_4_InGaAs_sw.csv contains (Delay(ps), Amplitude(mV)) for the InGaAs wafers between frequencies 100GHz-2600GHz with two different doping concentrations in the Fig 4 of the paper. The doping concentration is mentioned within brackets
and the units is *10^16/cm^3.

Fig_4_InGaAsP_sw.csv contains (Delay(ps), Amplitude(mV)) for the InGaAsP wafers between frequencies 100GHz -2600GHz with four different doping concentrations in the Fig 4 of the paper. The doping concentration is mentioned within brackets
and the units is *10^16/cm^3.

Fig_5.csv contains (Frequency(GHz), THz power (a.u)) for the best performed InGaAs and InGaAsP wafer with Fe doping concentration 0.5*10^16/cm^3 and 4.0*10^16/cm^3 respectively. It contains the data for the 
Fig 5 in the paper.

Fig_6a.csv contains (Bias(V), THz power (uW)) and  for the for the best performed InGaAs and InGaAsP wafer with Fe doping concentration 0.5*10^16/cm^3 and 4.0*10^16/cm^3 respectively. 
It contains the data for the Fig 6a in the paper.
 

Fig_6b.csv contains (Laser power(mW), THz power(uW)) and  for the for the best performed InGaAs and InGaAsP wafer with Fe doping concentration 0.5*10^16/cm^3 and 4.0*10^16/cm^3 respectively. 
It contains the data for the Fig 6b in the paper.