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Data associated with Scattering in InAs/GaSb Coupled Quantum Wells as a Probe of Higher Order Subband Hybridisation
Knox, CS and Li, L and Rosamond, MC and Linfield, EH and Marrows, CH (2020) Data associated with Scattering in InAs/GaSb Coupled Quantum Wells as a Probe of Higher Order Subband Hybridisation. University of Leeds. [Dataset] https://doi.org/10.5518/815
Dataset description
We have performed a detailed investigation into the inter-subband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electron-like subbands are inhibited by anticrossing with the hole subbands. We also find that, by applying a gate bias to the GaSb layer, we are able to move the electron-hole anticrossing point in energy, modulating the electron-like states that should be localised within the InAs layer.
| Keywords: | InAs/GaSb | ||||||
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| Subjects: | F000 - Physical sciences F000 - Physical sciences > F300 - Physics F000 - Physical sciences > F300 - Physics > F320 - Chemical physics F000 - Physical sciences > F300 - Physics > F320 - Chemical physics > F321 - Solid-state physics |
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| Divisions: | Faculty of Engineering > School of Electronic and Electrical Engineering > Pollard Institute Faculty of Mathematics and Physical Sciences > School of Physics and Astronomy |
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| License: | Creative Commons Attribution 4.0 International (CC BY 4.0) | ||||||
| Date deposited: | 26 Jun 2020 16:42 | ||||||
| URI: | http://archive.researchdata.leeds.ac.uk/id/eprint/700 | ||||||
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README.txt [505B] 
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