Research Data Leeds Repository
Data associated with Scattering in InAs/GaSb Coupled Quantum Wells as a Probe of Higher Order Subband Hybridisation
Citation
Knox, Craig S. and Li, Lianhe and Rosamond, Mark C. and Linfield, Edmund and Marrows, Christopher H. (2020) Data associated with Scattering in InAs/GaSb Coupled Quantum Wells as a Probe of Higher Order Subband Hybridisation. University of Leeds. [Dataset] https://doi.org/10.5518/815
Dataset description
We have performed a detailed investigation into the inter-subband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electron-like subbands are inhibited by anticrossing with the hole subbands. We also find that, by applying a gate bias to the GaSb layer, we are able to move the electron-hole anticrossing point in energy, modulating the electron-like states that should be localised within the InAs layer.
Keywords: | InAs/GaSb | ||||||
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Subjects: | F000 - Physical sciences F000 - Physical sciences > F300 - Physics F000 - Physical sciences > F300 - Physics > F320 - Chemical physics F000 - Physical sciences > F300 - Physics > F320 - Chemical physics > F321 - Solid-state physics |
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Divisions: | Faculty of Engineering and Physical Sciences > School of Electronic and Electrical Engineering > Pollard Institute Faculty of Engineering and Physical Sciences > School of Physics and Astronomy |
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License: | Creative Commons Attribution 4.0 International (CC BY 4.0) | ||||||
Date deposited: | 26 Jun 2020 16:42 | ||||||
URI: | https://archive.researchdata.leeds.ac.uk/id/eprint/700 | ||||||